For over 50 years OSI Optoelectronics has been a leading provider of advanced optoelectronics solutions enabling critical functions in Aerospace & Defense, Medical & Life Sciences, Automation & Industrial Production, and Automotive & Consumer Electronics.
Photoconductive (PC) silicon photodiodes' combination of high sensitivity and high-speed response time makes them ideal for pulsed visible and near IR wavelengths from 350 to 1100 nm.
Photovoltaic (PV) silicon photodiodes are suited for lower dark current, high responsivity from 350 to 1100 nm with exceptional stability over wide temperature variations while maintaining a high shunt resistance.
SB series silicon photodiodes with superior sensitivity in the 350 to 550 nm are suited for detecting low light levels. They offer exceptional stability over wide temperature variations while maintaining a high shunt resistance.
The inversion channel UV-Enhanced silicon photodiodes (UVI) exhibit 100% internal quantum efficiency. With high shunt resistance and high breakdown voltage, they are ideal for low-intensity light measurements from 200 to 1100nm range.
Planar diffused structure, UV-Enhanced (UVD) photodiode series, offers low capacitance and rapid response times. The high-speed UVD photodiodes offer linearity of photocurrent to a very high light input power and excellent stability with prolonged exposure to harsh UV light.
Planar Diffused, IR-Suppressed, UV-Enhanced (UVE) series are high-speed UV-Enhanced devices with a peak sensitivity at 720nm and near IR suppression without using any optical filter.
The large active area radiation detectors (RD) provide the lowest possible junction capacitance with fast response times, measuring high energy X-rays and particles such as electrons, alpha rays, and heavy ions directly or indirectly using scintillators.
The R&D, 100 award-winning X-UV series, offers additional sensitivity in the X-Ray region of the electromagnetic spectrum without scintillator crystals or screens. They are sensitive from 0.07 nm to 200 nm (6 eV to 17.6 KeV) with exceptionally high stable quantum efficiencies.
The 16-element silicon photodiodes arrays are ideal for X-ray and gamma-ray detection applications. They are mounted on a PCB and can be coupled to scintillators such as Bismuth Germanate (BGO), Cadmium Tungstate (CdWO4) or Cesium Iodide (CsI).
The linear Photodiode Array (PDA) series consists of adjacent photodiodes on a common cathode substrate. Optimized for sensitivity in the UV, visible, or near IR range, they feature low cross-talk with exceptional uniformity for high precision simultaneous measurements of beams of many wavelengths.
The proprietary 4x4 two-dimensional silicon photodiode arrays offer complete isolation between each of the 16 elements with additional sensitivity in the blue region of the spectral range. The devices are ideal for position sensing, ratio, and scattering measurements.
The Dual-Sandwich or Two-Color Detectors are available in Silicon-Silicon (SSD) configuration, Silicon-InGaAs (SID) configuration, and SID with stage thermoelectric cooler. They measure remote temperature by comparing the ratio of radiation intensities of two adjacent wavelengths to standard black body radiation curves.
The YAG series silicon photodiodes are optimized for high responsivity at 1060 nm with low capacitance and fast response time. They are ideal for ranging applications and are also available in quadrant configuration, suitable for aiming and pointing applications.
Silicon Avalanche Photodiodes (APD) use internal multiplication to achieve gain due to impact ionization. Our optimized series of high responsivity and high sensitivity APDs are available in various sizes, with flat window caps or ball lenses for optical fiber applications.
The Photop™ series combine a silicon photodiode with an operational amplifier in one package. They are available with the sensitivity ranges from 350 to 1100nm, and UV-Enhanced from 200 to 1100 nm. The selected op-amps are perfectly compatible with the photodiodes. These low noise, low drift features allow support of various gains and bandwidths up to several MHz.
Our renowned PIN-10AP design matches the human eye CIE curve to within 4% of the area. The devices in this series are also available with an integrated operational amplifier. They are available with a NIST traceable calibration data.
The Detector-Filter (DF) series combine a high-quality optical filter with a silicon photodiode to achieve a tailored spectral response. The devices are available in various standard and custom detector-filter combinations, including a UV enhanced combination, with a narrow bandpass filter peaking at 254 nm and a combination with a flat responsivity from 450 to 950 nm.
The solderable silicon photodiode chip series is available with or without flying leads, for ease of assembly. They offer low capacitance and high open-circuit voltages and are available with 3" leads for both anode and cathode. The SCL series exhibit low capacitance and fast response time while the SVL series are suited for low noise applications.
The SPOT series bi-cell and quadrant silicon photodiodes are ideal for nulling or centering applications. They exhibit excellent stability over time and temperature, fast response times, and position resolutions of better than 0.1 µm. They are available with various gap sizes between the elements.
The Super Linear Position Sensing Detectors (PSD) feature a state of the art duo-lateral technology, offering position accuracy of 99% over 64% of the sensing area. The two separate resistive layers - located on the top and the bottom of the chip - offers continuous output proportional to the displacement of a light spot from the center of the active area.
Tetra-lateral position sensing detectors (PSD) designed with one single resistive layer for both one and two-dimensional measurements consist of one common anode. They offer high response uniformity, low dark current, and good position linearity over 64% of the sensing area.
The high-quality plastic encapsulated silicon photodiodes are sensitive to wavelengths in the visible to near IR spectrum and 700 to 1100 nm range only with visible blocking compounds. They are available in various packages, including BPW34, BPW34 SMT, T-1, and T-1¾, with flat or lensed side views and a surface mount version (SOT-23).
The Ultra-High Speed series are small active area silicon photodiodes optimized for rapid response times and high-bandwidth applications. They are sensitive to wavelengths from 350 to 1100 nm with response times in a few hundred picoseconds.
The BI-SMT series are single-channel back-illuminated silicon photodiodes designed to minimize dead zones at the edge of the device. Each device mounted on a substrate with dimensions close to the chip dimensions allowing multiple detectors to be arranged in a tiled format and ease of coupling to a scintillator if desired.
By leveraging our core expertise in optoelectronics technology and global manufacturing presence, OSI Optoelectronics leads the industry in providing the best, and most advanced solutions. In addition to our extensive assortment of standard products, OSI Optoelectronics has been developing and manufacturing OEM and custom solutions for leading technologies and industries for a wide variety of demanding applications for over 50 years. We have been qualified in many aerospace, medical, communication and automotive companies.
Our products and solutions have been qualified by many aerospace and defense, medical, communications, and automotive companies. Our products are manufactured and tested per DoD MIL-I-45208, MIL-PRF-19500, MIL-STD-883, and MIL-STD-75 standards. Also, the company is compliant with International Traffic in Arms Regulations (ITAR) standards for aerospace certification facilities (ISO AS9100).
At OSI Optoelectronics, we provide complete solutions and services from concept to design to production. With our extensive engineering capabilities in a variety of disciplines, we have created a company for your most pressing needs, with an experienced engineering team to back them up.
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